2N5401S Datasheet & Equivalents
PNP
SOT-23
General Purpose
TECH PUBLIC
VCEO
160V
Ic Max
600mA
Pd Max
300mW
hFE Gain
300
Quick Reference
The 2N5401S is a PNP bipolar junction transistor in a SOT-23 package, manufactured by TECH PUBLIC. It supports a breakdown voltage of 160V and continuous collector current of 600mA. It is widely used in switching and amplification circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | TECH PUBLIC | Original Manufacturer |
| Package | SOT-23 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| Category | Single | Configuration |
| Collector-Emitter Voltage (VCEO) | 160V | Max breakdown voltage |
| Collector Current (Ic) | 600mA | Max current handling |
| Power Dissipation (Pd) | 300mW | Max thermal limit |
| DC Current Gain (hFE) | 300 | Base signal amplification ratio |
| Transition Frequency (fT) | 300MHz | Max operating frequency |
| Saturation Voltage (VCEsat) | 500mV | Voltage drop when fully ON |
| Emitter-Base Voltage (Vebo) | 6V | Max emitter-base breakdown |
| Collector Cutoff Current | 50nA | Leakage current when OFF |
| Operating Temp | - | Safe junction temperature range |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | IC | hFE | Pd | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| MMBT5401-B | PNP | SOT-23 | 160V | 600mA | 100 | 300mW | BLUE ROCKET 📄 PDF |
| MMBT5401 | PNP | SOT-23 | 160V | 600mA | 100 | 300mW | R+O 📄 PDF |