MMBT5401 Datasheet & Equivalents

PNP SOT-23 General Purpose MDD(Microdiode Semiconductor)
VCEO
150V
Ic Max
600mA
Pd Max
300mW
hFE Gain
300

Quick Reference

The MMBT5401 is a PNP bipolar junction transistor in a SOT-23 package, manufactured by MDD(Microdiode Semiconductor). It supports a breakdown voltage of 150V and continuous collector current of 600mA. It is widely used in switching and amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerMDD(Microdiode Semiconductor)Original Manufacturer
PackageSOT-23Physical mounting
Transistor TypeBJTBipolar Junction Transistor
CategorySingleConfiguration
Collector-Emitter Voltage (VCEO)150VMax breakdown voltage
Collector Current (Ic)600mAMax current handling
Power Dissipation (Pd)300mWMax thermal limit
DC Current Gain (hFE)300Base signal amplification ratio
Transition Frequency (fT)100MHzMax operating frequency
Saturation Voltage (VCEsat)500mVVoltage drop when fully ON
Emitter-Base Voltage (Vebo)5VMax emitter-base breakdown
Collector Cutoff Current100nALeakage current when OFF
Operating Temp-55โ„ƒ~+150โ„ƒSafe junction temperature range

Equivalent Transistors & Alternatives

PartTypePackageVCEOIChFEPdManufacturer / Datasheet
MMBT5401(RANGE:200-300) PNP SOT-23 150V 600mA 300 300mW
MMBT5401LT1G-CN PNP SOT-23 150V 600mA 300 300mW
ChipNobo ๐Ÿ“„ PDF
MMBT5401S PNP SOT-23 150V 600mA 300 300mW
2N5401 PNP SOT-23 150V 600mA 300 300mW
MMBT5401_R1_00101 PNP SOT-23 150V 600mA 240 225mW
2N5401S PNP SOT-23 150V 600mA 400 300mW
YONGYUTAI ๐Ÿ“„ PDF
MMBT5401(RANGE:100-200) PNP SOT-23 150V 600mA 100 300mW
MMBT5401-TP PNP SOT-23 150V 600mA 100 300mW
2N5401 PNP SOT-23 150V 600mA 80 300mW
GOODWORK ๐Ÿ“„ PDF
2N5401S-RTK/P PNP SOT-23 150V 600mA 60 350mW
MMBT5401-7-F PNP SOT-23 150V 600mA 60 310mW
PBHV9115T PNP SOT-23 150V 1A 100 300mW
Nexperia ๐Ÿ“„ PDF
215 PNP SOT-23 160V 600mA 300 300mW
TECH PUBLIC ๐Ÿ“„ PDF
2N5401S PNP SOT-23 160V 600mA 100 300mW
BLUE ROCKET ๐Ÿ“„ PDF