MMBT4403LT1G Datasheet & Equivalents

PNP SOT-23 General Purpose onsemi
VCEO
40V
Ic Max
600mA
Pd Max
225mW
hFE Gain
30

Quick Reference

The MMBT4403LT1G is a PNP bipolar junction transistor in a SOT-23 package, manufactured by onsemi. It supports a breakdown voltage of 40V and continuous collector current of 600mA. It is widely used in switching and amplification circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeBJTBipolar Junction Transistor
CategorySingleConfiguration
Collector-Emitter Voltage (VCEO)40VMax breakdown voltage
Collector Current (Ic)600mAMax current handling
Power Dissipation (Pd)225mWMax thermal limit
DC Current Gain (hFE)30Base signal amplification ratio
Transition Frequency (fT)200MHzMax operating frequency
Saturation Voltage (VCEsat)400mVVoltage drop when fully ON
Emitter-Base Voltage (Vebo)5VMax emitter-base breakdown
Collector Cutoff Current100nALeakage current when OFF
Operating Temp-55โ„ƒ~+150โ„ƒSafe junction temperature range

Equivalent Transistors & Alternatives

PartTypePackageVCEOIChFEPdManufacturer / Datasheet
LMBT4403LT1G PNP SOT-23 40V 600mA 30 300mW
MMBT4403LT3G PNP SOT-23 40V 600mA 30 300mW
LMBT2907ALT1G PNP SOT-23 40V 600mA 35 300mW
S-LMBT2907ALT1G PNP SOT-23 40V 600mA 35 300mW
MMBT4403 PNP SOT-23 40V 600mA 70 300mW
MMBT4403-7-F PNP SOT-23 40V 600mA 100 310mW
MMBT4403_R1_00001 PNP SOT-23 40V 600mA 100 225mW
PMBT4403 PNP SOT-23 40V 600mA 100 250mW
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