MMBT2907A Datasheet & Equivalents

PNP SOT-23 General Purpose amsem
VCEO
40V
Ic Max
600mA
Pd Max
250mW
hFE Gain
100

Quick Reference

The MMBT2907A is a PNP bipolar junction transistor in a SOT-23 package, manufactured by amsem. It supports a breakdown voltage of 40V and continuous collector current of 600mA. It is widely used in switching and amplification circuits.

Technical Specifications

ParameterValueDescription
ManufactureramsemOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeBJTBipolar Junction Transistor
CategorySingleConfiguration
Collector-Emitter Voltage (VCEO)40VMax breakdown voltage
Collector Current (Ic)600mAMax current handling
Power Dissipation (Pd)250mWMax thermal limit
DC Current Gain (hFE)100Base signal amplification ratio
Transition Frequency (fT)200MHzMax operating frequency
Saturation Voltage (VCEsat)-Voltage drop when fully ON
Emitter-Base Voltage (Vebo)5VMax emitter-base breakdown
Collector Cutoff Current100nALeakage current when OFF
Operating Temp-55โ„ƒ~+150โ„ƒSafe junction temperature range

Equivalent Transistors & Alternatives

PartTypePackageVCEOIChFEPdManufacturer / Datasheet
MMBT4403-7-F PNP SOT-23 40V 600mA 100 310mW
MMBT4403_R1_00001 PNP SOT-23 40V 600mA 100 225mW
PMBT4403 PNP SOT-23 40V 600mA 100 250mW
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215 PNP SOT-23 40V 600mA 100 300mW
MMBT4403 PNP SOT-23 40V 600mA 100 300mW
MMBT4403 PNP SOT-23 40V 600mA 100 300mW
MMBT4403 PNP SOT-23 40V 600mA 100 300mW
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MMBT4403 PNP SOT-23 40V 600mA 100 300mW
MMBT4403 PNP SOT-23 40V 600mA 70 300mW
MMBT4403 PNP SOT-23 40V 600mA 35 300mW
LMBT2907ALT1G PNP SOT-23 40V 600mA 35 300mW
S-LMBT2907ALT1G PNP SOT-23 40V 600mA 30 300mW
LMBT4403LT1G PNP SOT-23 40V 600mA 30 225mW
MMBT4403LT1G PNP SOT-23 40V 600mA 30 300mW
MMBT4403LT3G PNP SOT-23 40V 600mA 200 350mW
MMBT4403LT1 PNP SOT-23 40V 600mA 300 350mW
KN4403S-RTK/P PNP SOT-23 40V 600mA 300 250mW
MMBT4403-6AF PNP SOT-23 40V 600mA 300 250mW
MMBT2907A(2F) PNP SOT-23 40V 600mA 300 300mW
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MMBT4403 PNP SOT-23 40V 600mA 300 300mW
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