MMBT3906WT1G Transistor Datasheet & Specifications

PNP BJT | onsemi

PNPSC-70(SOT-323)General Purpose
VCEO
40V
Ic Max
200mA
Pd Max
150mW
Gain
60

Quick Reference

The MMBT3906WT1G is a PNP bipolar transistor in a SC-70(SOT-323) package. This datasheet provides complete specifications including 40V breakdown voltage and 200mA continuous collector current. Download the MMBT3906WT1G datasheet PDF below for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageSC-70(SOT-323)Physical mounting
VCEO40VBreakdown voltage
IC Max200mACollector current
Pd Max150mWPower dissipation
Gain60DC current gain
Frequency250MHzTransition speed
VCEsat250mVSaturation voltage
Vebo5VEmitter-Base voltage
Temp-55โ„ƒ~+150โ„ƒOperating temp

Direct Replacements & Alternatives

PartTypePackageVCEOIcPd
2SA1577T106RPNPSC-70(SOT-323)32V500mA200mW
2SA1576AT106RPNPSC-70(SOT-323)50V150mA200mW
2SA1577T106QPNPSC-70(SOT-323)32V500mA200mW
BC858BWT1GPNPSC-70(SOT-323)30V100mA150mW
BC858AWT1GPNPSC-70(SOT-323)30V100mA150mW
2SA1576AT106SPNPSC-70(SOT-323)50V150mA200mW
2SA1576AT106QPNPSC-70(SOT-323)50V150mA200mW
2SAR502U3T106PNPSC-70(SOT-323)30V500mA200mW