BC858BWT1G Transistor Datasheet & Specifications

PNP BJT | onsemi

PNPSC-70(SOT-323)General Purpose
VCEO
30V
Ic Max
100mA
Pd Max
150mW
Gain
220

Quick Reference

The BC858BWT1G is a PNP bipolar transistor in a SC-70(SOT-323) package. This datasheet provides complete specifications including 30V breakdown voltage and 100mA continuous collector current. Download the BC858BWT1G datasheet PDF below for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageSC-70(SOT-323)Physical mounting
VCEO30VBreakdown voltage
IC Max100mACollector current
Pd Max150mWPower dissipation
Gain220DC current gain
Frequency100MHzTransition speed
VCEsat650mVSaturation voltage
Vebo5VEmitter-Base voltage
Temp-55โ„ƒ~+150โ„ƒOperating temp

Direct Replacements & Alternatives

PartTypePackageVCEOIcPd
2SA1577T106RPNPSC-70(SOT-323)32V500mA200mW
2SA1577T106QPNPSC-70(SOT-323)32V500mA200mW
BC858AWT1GPNPSC-70(SOT-323)30V100mA150mW
2SAR502U3T106PNPSC-70(SOT-323)30V500mA200mW