MMBT3906WT1G Datasheet & Equivalents

PNP SOT-323 General Purpose onsemi
VCEO
40V
Ic Max
200mA
Pd Max
150mW
hFE Gain
60

Quick Reference

The MMBT3906WT1G is a PNP bipolar junction transistor in a SOT-323 package, manufactured by onsemi. It supports a breakdown voltage of 40V and continuous collector current of 200mA. It is widely used in switching and amplification circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageSOT-323Physical mounting
Transistor TypeBJTBipolar Junction Transistor
CategorySingleConfiguration
Collector-Emitter Voltage (VCEO)40VMax breakdown voltage
Collector Current (Ic)200mAMax current handling
Power Dissipation (Pd)150mWMax thermal limit
DC Current Gain (hFE)60Base signal amplification ratio
Transition Frequency (fT)250MHzMax operating frequency
Saturation Voltage (VCEsat)250mVVoltage drop when fully ON
Emitter-Base Voltage (Vebo)5VMax emitter-base breakdown
Collector Cutoff Current50nALeakage current when OFF
Operating Temp-55โ„ƒ~+150โ„ƒSafe junction temperature range

Equivalent Transistors & Alternatives

PartTypePackageVCEOIChFEPdManufacturer / Datasheet
MMST3906 PNP SOT-323 40V 200mA 80 200mW
UMT3906T106 PNP SOT-323 40V 200mA 100 200mW
MMBT3906W PNP SOT-323 40V 200mA 100 200mW
MMBT3906W PNP SOT-323 40V 200mA 300 200mW
GOODWORK ๐Ÿ“„ PDF
MMST3904 PNP SOT-323 40V 200mA 300 200mW
GOODWORK ๐Ÿ“„ PDF
MMST3906 PNP SOT-323 40V 200mA 300 200mW
MMST3906 PNP SOT-323 40V 200mA 300 200mW
MMST3906 PNP SOT-323 40V 200mA 300 200mW
HT(Shenzhen J... ๐Ÿ“„ PDF
BC807-16LWX PNP SOT-323 45V 500mA 100 200mW
Nexperia ๐Ÿ“„ PDF
BC807W PNP SOT-323 45V 500mA 100 200mW
BC807W PNP SOT-323 45V 500mA 100 290mW
Nexperia ๐Ÿ“„ PDF
115 PNP SOT-323 45V 500mA 250 200mW
Nexperia ๐Ÿ“„ PDF
BC807-40W PNP SOT-323 45V 500mA 250 250mW
115 PNP SOT-323 45V 500mA 600 200mW
BC807-40W PNP SOT-323 45V 500mA 600 200mW
FUXINSEMI ๐Ÿ“„ PDF
BC807-40WQ PNP SOT-323 80V 500mA 100 150mW