BC807-40W Datasheet & Equivalents

PNP SOT-323 General Purpose LGE
VCEO
45V
Ic Max
500mA
Pd Max
250mW
hFE Gain
250

Quick Reference

The BC807-40W is a PNP bipolar junction transistor in a SOT-323 package, manufactured by LGE. It supports a breakdown voltage of 45V and continuous collector current of 500mA. It is widely used in switching and amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerLGEOriginal Manufacturer
PackageSOT-323Physical mounting
Transistor TypeBJTBipolar Junction Transistor
CategorySingleConfiguration
Collector-Emitter Voltage (VCEO)45VMax breakdown voltage
Collector Current (Ic)500mAMax current handling
Power Dissipation (Pd)250mWMax thermal limit
DC Current Gain (hFE)250Base signal amplification ratio
Transition Frequency (fT)200MHzMax operating frequency
Saturation Voltage (VCEsat)700mVVoltage drop when fully ON
Emitter-Base Voltage (Vebo)5VMax emitter-base breakdown
Collector Cutoff Current50uALeakage current when OFF
Operating Temp-Safe junction temperature range

Equivalent Transistors & Alternatives

PartTypePackageVCEOIChFEPdManufacturer / Datasheet
BC807-40W PNP SOT-323 45V 500mA 250 200mW
Nexperia ๐Ÿ“„ PDF
115 PNP SOT-323 45V 500mA 100 200mW
Nexperia ๐Ÿ“„ PDF
BC807-16LWX PNP SOT-323 45V 500mA 100 200mW
BC807W PNP SOT-323 45V 500mA 100 290mW
Nexperia ๐Ÿ“„ PDF
BC807W PNP SOT-323 45V 500mA 600 200mW
115 PNP SOT-323 60V 600mA 300 100mW
BC807-40WQ PNP SOT-323 60V 600mA 100 225mW
KTN2907AU-RTK/PS PNP SOT-323 60V 600mA 100 200mW
MMBT2907AW_R1_00001 PNP SOT-323 60V 600mA 100 200mW
MMST2907A-7-F PNP SOT-323 60V 600mA 100 200mW
Nexperia ๐Ÿ“„ PDF
MMST2907AQ-7 PNP SOT-323 60V 600mA 75 150mW
PMST2907A PNP SOT-323 60V 600mA 75 200mW
115 PNP SOT-323 60V 1A 100 400mW
NSVMMBT2907AWT1G PNP SOT-323 60V 1A 100 500mW
UMT2907AT106 PNP SOT-323 80V 500mA 100 150mW