MJE5852G Transistor Datasheet & Specifications
PNPTO-220General Purpose
VCEO
400V
Ic Max
8A
Pd Max
80W
Gain
5
Quick Reference
The MJE5852G is a PNP bipolar transistor in a TO-220 package. This datasheet provides complete specifications including 400V breakdown voltage and 8A continuous collector current. Download the MJE5852G datasheet PDF below for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | onsemi | Original Manufacturer |
| Package | TO-220 | Physical mounting |
| VCEO | 400V | Breakdown voltage |
| IC Max | 8A | Collector current |
| Pd Max | 80W | Power dissipation |
| Gain | 5 | DC current gain |
| Frequency | - | Transition speed |
| VCEsat | 5V | Saturation voltage |
| Vebo | 6V | Emitter-Base voltage |
| Temp | -65℃~+150℃ | Operating temp |
Direct Replacements & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| MJE15035G | PNP | TO-220 | 350V | 4A | 50W |