MJE15035G Transistor Datasheet & Specifications

PNP BJT | onsemi

PNPTO-220General Purpose
VCEO
350V
Ic Max
4A
Pd Max
50W
Gain
100
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Quick Reference

The MJE15035G is a PNP bipolar transistor in a TO-220 package. This datasheet provides complete specifications including 350V breakdown voltage and 4A continuous collector current. Download the MJE15035G datasheet PDF below for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageTO-220Physical mounting
VCEO350VBreakdown voltage
IC Max4ACollector current
Pd Max50WPower dissipation
Gain100DC current gain
Frequency30MHzTransition speed
VCEsat500mVSaturation voltage
Vebo5VEmitter-Base voltage
Temp-65℃~+150℃Operating temp

Direct Replacements & Alternatives

PartTypePackageVCEOIcPd
MJE5852GPNPTO-220400V8A80W
MJE15033GPNPTO-220250V8A50W
View all TO-220 PNP Transistors ›