MJE340G Datasheet & Equivalents
NPN
TO-126
High Power
JSMSEMI
VCEO
300V
Ic Max
500mA
Pd Max
20W
hFE Gain
240
Quick Reference
The MJE340G is a NPN bipolar junction transistor in a TO-126 package, manufactured by JSMSEMI. It supports a breakdown voltage of 300V and continuous collector current of 500mA. It is widely used in switching and amplification circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | JSMSEMI | Original Manufacturer |
| Package | TO-126 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| Category | Single | Configuration |
| Collector-Emitter Voltage (VCEO) | 300V | Max breakdown voltage |
| Collector Current (Ic) | 500mA | Max current handling |
| Power Dissipation (Pd) | 20W | Max thermal limit |
| DC Current Gain (hFE) | 240 | Base signal amplification ratio |
| Transition Frequency (fT) | - | Max operating frequency |
| Saturation Voltage (VCEsat) | 1V | Voltage drop when fully ON |
| Emitter-Base Voltage (Vebo) | 3V | Max emitter-base breakdown |
| Collector Cutoff Current | 100nA | Leakage current when OFF |
| Operating Temp | - | Safe junction temperature range |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | IC | hFE | Pd | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| MJE340STU-HXY | NPN | TO-126 | 350V | 500mA | - | 625mW | HXY MOSFET 📄 PDF |
| MJE340 | NPN | TO-126 | 350V | 500mA | - | 625mW | HXY MOSFET 📄 PDF |
| MJE13003(RANGE:20-30) | NPN | TO-126 | 400V | 1A | 9 | 1.25W | JSCJ 📄 PDF |