MJE340 Datasheet & Equivalents
NPN
TO-126
General Purpose
HXY MOSFET
VCEO
350V
Ic Max
500mA
Pd Max
625mW
hFE Gain
-
Quick Reference
The MJE340 is a NPN bipolar junction transistor in a TO-126 package, manufactured by HXY MOSFET. It supports a breakdown voltage of 350V and continuous collector current of 500mA. It is widely used in switching and amplification circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | HXY MOSFET | Original Manufacturer |
| Package | TO-126 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| Category | Single | Configuration |
| Collector-Emitter Voltage (VCEO) | 350V | Max breakdown voltage |
| Collector Current (Ic) | 500mA | Max current handling |
| Power Dissipation (Pd) | 625mW | Max thermal limit |
| DC Current Gain (hFE) | - | Base signal amplification ratio |
| Transition Frequency (fT) | 50MHz | Max operating frequency |
| Saturation Voltage (VCEsat) | 250@1A,2V | Voltage drop when fully ON |
| Emitter-Base Voltage (Vebo) | - | Max emitter-base breakdown |
| Collector Cutoff Current | - | Leakage current when OFF |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | IC | hFE | Pd | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| MJE340STU-HXY | NPN | TO-126 | 350V | 500mA | - | 625mW | HXY MOSFET 📄 PDF |
| MJE13003(RANGE:20-30) | NPN | TO-126 | 400V | 1A | 9 | 1.25W | JSCJ 📄 PDF |