MJE15035G Datasheet & Equivalents
PNP
TO-220
High Power
onsemi
VCEO
350V
Ic Max
4A
Pd Max
50W
hFE Gain
100
Quick Reference
The MJE15035G is a PNP bipolar junction transistor in a TO-220 package, manufactured by onsemi. It supports a breakdown voltage of 350V and continuous collector current of 4A. It is widely used in switching and amplification circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | onsemi | Original Manufacturer |
| Package | TO-220 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| Category | Single | Configuration |
| Collector-Emitter Voltage (VCEO) | 350V | Max breakdown voltage |
| Collector Current (Ic) | 4A | Max current handling |
| Power Dissipation (Pd) | 50W | Max thermal limit |
| DC Current Gain (hFE) | 100 | Base signal amplification ratio |
| Transition Frequency (fT) | 30MHz | Max operating frequency |
| Saturation Voltage (VCEsat) | 500mV | Voltage drop when fully ON |
| Emitter-Base Voltage (Vebo) | 5V | Max emitter-base breakdown |
| Collector Cutoff Current | 10uA | Leakage current when OFF |
| Operating Temp | -65℃~+150℃ | Safe junction temperature range |