MJE5852G Datasheet & Equivalents
PNP
TO-220
High Power
onsemi
VCEO
400V
Ic Max
8A
Pd Max
80W
hFE Gain
5
Quick Reference
The MJE5852G is a PNP bipolar junction transistor in a TO-220 package, manufactured by onsemi. It supports a breakdown voltage of 400V and continuous collector current of 8A. It is widely used in switching and amplification circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | onsemi | Original Manufacturer |
| Package | TO-220 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| Category | Single | Configuration |
| Collector-Emitter Voltage (VCEO) | 400V | Max breakdown voltage |
| Collector Current (Ic) | 8A | Max current handling |
| Power Dissipation (Pd) | 80W | Max thermal limit |
| DC Current Gain (hFE) | 5 | Base signal amplification ratio |
| Transition Frequency (fT) | - | Max operating frequency |
| Saturation Voltage (VCEsat) | 5V | Voltage drop when fully ON |
| Emitter-Base Voltage (Vebo) | 6V | Max emitter-base breakdown |
| Collector Cutoff Current | 2.5mA | Leakage current when OFF |
| Operating Temp | -65℃~+150℃ | Safe junction temperature range |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | IC | hFE | Pd | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| No exact equivalents found in database. | |||||||