MJE15032G Transistor Datasheet & Specifications

NPN BJT | onsemi

NPNTO-220General Purpose
VCEO
250V
Ic Max
8A
Pd Max
50W
Gain
70

Quick Reference

The MJE15032G is a NPN bipolar transistor in a TO-220 package. This datasheet provides complete specifications including 250V breakdown voltage and 8A continuous collector current. Download the MJE15032G datasheet PDF below for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageTO-220Physical mounting
VCEO250VBreakdown voltage
IC Max8ACollector current
Pd Max50WPower dissipation
Gain70DC current gain
Frequency-Transition speed
VCEsat-Saturation voltage
Vebo30MHzEmitter-Base voltage
Temp-65โ„ƒ~+150โ„ƒOperating temp

Direct Replacements & Alternatives

PartTypePackageVCEOIcPd
MJE15032GNPNTO-220250V8A50W