MJD50T4G Datasheet & Equivalents
NPN
TO-252 (DPAK)
High Power
onsemi
VCEO
400V
Ic Max
1A
Pd Max
15W
hFE Gain
30
Quick Reference
The MJD50T4G is a NPN bipolar junction transistor in a TO-252 (DPAK) package, manufactured by onsemi. It supports a breakdown voltage of 400V and continuous collector current of 1A. It is widely used in switching and amplification circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | onsemi | Original Manufacturer |
| Package | TO-252 (DPAK) | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| Category | Single | Configuration |
| Collector-Emitter Voltage (VCEO) | 400V | Max breakdown voltage |
| Collector Current (Ic) | 1A | Max current handling |
| Power Dissipation (Pd) | 15W | Max thermal limit |
| DC Current Gain (hFE) | 30 | Base signal amplification ratio |
| Transition Frequency (fT) | 10MHz | Max operating frequency |
| Saturation Voltage (VCEsat) | 1V | Voltage drop when fully ON |
| Emitter-Base Voltage (Vebo) | 5V | Max emitter-base breakdown |
| Collector Cutoff Current | 200uA | Leakage current when OFF |
| Operating Temp | -65℃~+150℃ | Safe junction temperature range |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | IC | hFE | Pd | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| 3DD13003(RANGE:20-25) | NPN | TO-252 (DPAK) | 400V | 1.5A | 20 | 1.25W | JSCJ 📄 PDF |
| 13003 | NPN | TO-252 (DPAK) | 420V | 1A | - | 1.2W | GOODWORK |
| 13003 | NPN | TO-252 (DPAK) | 480V | 1.5A | 40 | 1.25W | HXY MOSFET 📄 PDF |
| STD13003T4-HXY | NPN | TO-252 (DPAK) | 500V | 1.5A | - | 1.25W | HXY MOSFET 📄 PDF |
| KSC5502DTM | NPN | TO-252 (DPAK) | 600V | 2A | 40 | 87.83W | onsemi 📄 PDF |