KSC5502DTM Datasheet & Equivalents
NPN
TO-252 (DPAK)
High Power
onsemi
VCEO
600V
Ic Max
2A
Pd Max
87.83W
hFE Gain
40
Quick Reference
The KSC5502DTM is a NPN bipolar junction transistor in a TO-252 (DPAK) package, manufactured by onsemi. It supports a breakdown voltage of 600V and continuous collector current of 2A. It is widely used in switching and amplification circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | onsemi | Original Manufacturer |
| Package | TO-252 (DPAK) | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| Category | Single | Configuration |
| Collector-Emitter Voltage (VCEO) | 600V | Max breakdown voltage |
| Collector Current (Ic) | 2A | Max current handling |
| Power Dissipation (Pd) | 87.83W | Max thermal limit |
| DC Current Gain (hFE) | 40 | Base signal amplification ratio |
| Transition Frequency (fT) | 11MHz | Max operating frequency |
| Saturation Voltage (VCEsat) | 3V | Voltage drop when fully ON |
| Emitter-Base Voltage (Vebo) | 12V | Max emitter-base breakdown |
| Collector Cutoff Current | 500uA | Leakage current when OFF |
| Operating Temp | -65℃~+150℃ | Safe junction temperature range |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | IC | hFE | Pd | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| No exact equivalents found in database. | |||||||