MJD45H11 Transistor Datasheet & Specifications
PNPTO-252General Purpose
VCEO
80V
Ic Max
8A
Pd Max
20W
Gain
60
Quick Reference
The MJD45H11 is a PNP bipolar transistor in a TO-252 package. This datasheet provides complete specifications including 80V breakdown voltage and 8A continuous collector current. Download the MJD45H11 datasheet PDF below for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | GOODWORK | Original Manufacturer |
| Package | TO-252 | Physical mounting |
| VCEO | 80V | Breakdown voltage |
| IC Max | 8A | Collector current |
| Pd Max | 20W | Power dissipation |
| Gain | 60 | DC current gain |
| Frequency | - | Transition speed |
| VCEsat | - | Saturation voltage |
| Vebo | 50MHz | Emitter-Base voltage |
| Temp | -65℃~+150℃ | Operating temp |
Direct Replacements & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| MJD42CRLG | PNP | DPAK | - | 100V | 6A |
| MJD42CT4G(MS) | PNP | TO-252 | 100V | 6A | 1.25W |
| MJD42C | PNP | TO-252 | 100V | 6A | 20W |
| BRMJE172D | PNP | TO-252 | 80V | 6A | 12.5W |
| MJD127T4G(MS) | PNP | TO-252 | 100V | 8A | 1.5W |
| MJD127T4G-JSM | PNP | TO-252 | 100V | 8A | 1.75W |
| MJD127 | PNP | TO-252 | 100V | 5A | 65W |