MJD127T4G(MS) Transistor Datasheet & Specifications
PNPTO-252General Purpose
VCEO
100V
Ic Max
8A
Pd Max
1.5W
Gain
12000
Quick Reference
The MJD127T4G(MS) is a PNP bipolar transistor in a TO-252 package. This datasheet provides complete specifications including 100V breakdown voltage and 8A continuous collector current. Download the MJD127T4G(MS) datasheet PDF below for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | MSKSEMI | Original Manufacturer |
| Package | TO-252 | Physical mounting |
| VCEO | 100V | Breakdown voltage |
| IC Max | 8A | Collector current |
| Pd Max | 1.5W | Power dissipation |
| Gain | 12000 | DC current gain |
| Frequency | - | Transition speed |
| VCEsat | 4V | Saturation voltage |
| Vebo | 5V | Emitter-Base voltage |
| Temp | -55℃~+150℃ | Operating temp |
Direct Replacements & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| MJD42CRLG | PNP | DPAK | - | 100V | 6A |
| MJD42CT4G(MS) | PNP | TO-252 | 100V | 6A | 1.25W |
| MJD42C | PNP | TO-252 | 100V | 6A | 20W |
| BRMJE172D | PNP | TO-252 | 80V | 6A | 12.5W |
| MJD127T4G-JSM | PNP | TO-252 | 100V | 8A | 1.75W |
| MJD127 | PNP | TO-252 | 100V | 5A | 65W |
| MJD45H11 | PNP | TO-252 | 80V | 8A | 20W |