MJD210RLG Datasheet & Equivalents

PNP TO-252 (DPAK) High Power onsemi
VCEO
25V
Ic Max
5A
Pd Max
12.5W
hFE Gain
70

Quick Reference

The MJD210RLG is a PNP bipolar junction transistor in a TO-252 (DPAK) package, manufactured by onsemi. It supports a breakdown voltage of 25V and continuous collector current of 5A. It is widely used in switching and amplification circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageTO-252 (DPAK)Physical mounting
Transistor TypeBJTBipolar Junction Transistor
CategorySingleConfiguration
Collector-Emitter Voltage (VCEO)25VMax breakdown voltage
Collector Current (Ic)5AMax current handling
Power Dissipation (Pd)12.5WMax thermal limit
DC Current Gain (hFE)70Base signal amplification ratio
Transition Frequency (fT)65MHzMax operating frequency
Saturation Voltage (VCEsat)1.8VVoltage drop when fully ON
Emitter-Base Voltage (Vebo)8VMax emitter-base breakdown
Collector Cutoff Current100uALeakage current when OFF
Operating Temp-65โ„ƒ~+150โ„ƒSafe junction temperature range

Equivalent Transistors & Alternatives

PartTypePackageVCEOIChFEPdManufacturer / Datasheet
2SA1012(RANGE:120-240) PNP TO-252 (DPAK) 50V 5A 120 1.25W
2SA2040-TL-E PNP TO-252 (DPAK) 50V 8A 200 15W
2SA2169-TL-E PNP TO-252 (DPAK) 50V 10A 700 950mW
STD2805T4 PNP TO-252 (DPAK) 60V 5A 85 15W
2SA1952 PNP TO-252 (DPAK) 60V 5A 120 1W
2SA1952TLQ PNP TO-252 (DPAK) 60V 5A 270 10W
KTA1385D-Y-RTF/P PNP TO-252 (DPAK) 60V 5A 400 15W
MJD2955G PNP TO-252 (DPAK) 60V 10A 20 20W
MJD2955T4G PNP TO-252 (DPAK) 60V 10A 20 20W