MJD2955T4G Datasheet & Equivalents
PNP
TO-252 (DPAK)
High Power
onsemi
VCEO
60V
Ic Max
10A
Pd Max
20W
hFE Gain
20
Quick Reference
The MJD2955T4G is a PNP bipolar junction transistor in a TO-252 (DPAK) package, manufactured by onsemi. It supports a breakdown voltage of 60V and continuous collector current of 10A. It is widely used in switching and amplification circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | onsemi | Original Manufacturer |
| Package | TO-252 (DPAK) | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| Category | Single | Configuration |
| Collector-Emitter Voltage (VCEO) | 60V | Max breakdown voltage |
| Collector Current (Ic) | 10A | Max current handling |
| Power Dissipation (Pd) | 20W | Max thermal limit |
| DC Current Gain (hFE) | 20 | Base signal amplification ratio |
| Transition Frequency (fT) | 2MHz | Max operating frequency |
| Saturation Voltage (VCEsat) | 1.1V | Voltage drop when fully ON |
| Emitter-Base Voltage (Vebo) | 5V | Max emitter-base breakdown |
| Collector Cutoff Current | 2uA | Leakage current when OFF |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |