MJD127T4G Transistor Datasheet & Specifications
PNPTO-252(DPAK)General Purpose
VCEO
100V
Ic Max
8A
Pd Max
1.75W
Gain
1000
Quick Reference
The MJD127T4G is a PNP bipolar transistor in a TO-252(DPAK) package. This datasheet provides complete specifications including 100V breakdown voltage and 8A continuous collector current. Download the MJD127T4G datasheet PDF below for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | onsemi | Original Manufacturer |
| Package | TO-252(DPAK) | Physical mounting |
| VCEO | 100V | Breakdown voltage |
| IC Max | 8A | Collector current |
| Pd Max | 1.75W | Power dissipation |
| Gain | 1000 | DC current gain |
| Frequency | 4MHz | Transition speed |
| VCEsat | 4V | Saturation voltage |
| Vebo | - | Emitter-Base voltage |
| Temp | -65℃~+150℃@(Tj) | Operating temp |
Direct Replacements & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| MJD45H11T4G | PNP | TO-252(DPAK) | 80V | 8A | 20W |
| NJVMJD45H11RLG | PNP | TO-252(DPAK) | 80V | 8A | 20W |
| MJD45H11 | PNP | TO-252 | 80V | 8A | 20W |
| NJVMJD127T4G | PNP | TO-252(DPAK) | 100V | 8A | 20W |
| MJD45H11G | PNP | TO-252(DPAK) | 80V | 8A | 20W |