MDE1932RH MOSFET Datasheet & Specifications
N-Channel
TO-263
High-Current
MagnaChip Semicon
Vds Max
80V
Id Max
175A
Rds(on)
3mΩ@10V
Vgs(th)
4V
Quick Reference
The MDE1932RH is an N-Channel MOSFET in a TO-263 package, manufactured by MagnaChip Semicon. It supports a drain-source breakdown voltage of 80V and a continuous drain current of 175A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | MagnaChip Semicon | Original Manufacturer |
| Package | TO-263 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 80V | Max breakdown voltage |
| Continuous Drain Current (Id) | 175A | Max current handling |
| Power Dissipation (Pd) | 209W | Max thermal limit |
| On-Resistance (Rds(on)) | 3mΩ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 4V | Voltage required to turn on |
| Gate Charge (Qg) | 116nC@10V | Switching energy |
| Input Capacitance (Ciss) | 7.2nF | Internal gate capacitance |
| Output Capacitance (Coss) | 50pF | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| SP010N02BGHTD | N-Channel | TO-263 | 100V | 220A | 2.1mΩ@10V | 3.2V | Siliup 📄 PDF |
| SFB030N100C3 | N-Channel | TO-263 | 100V | 260A | 2.5mΩ@10V | 3V | SCILICON 📄 PDF |
| PGY10N037 | N-Channel | TO-263 | 100V | 202A | 3.1mΩ@10V | 4V | HT(Shenzhen J... 📄 PDF |
| XRS180N15G | N-Channel | TO-263 | 150V | 180A | 4mΩ@10V | 3V | XNRUSEMI 📄 PDF |
| CMB048N15 | N-Channel | TO-263 | 150V | 200A | 4.4mΩ@10V | 4V | Cmos 📄 PDF |