JSM36326 MOSFET Datasheet & Specifications

N-Channel DFN-8(3.3x3.3) Logic-Level JSMSEMI
Vds Max
28V
Id Max
12A
Rds(on)
9.9mΩ@10V
Vgs(th)
1.2V

Quick Reference

The JSM36326 is an N-Channel MOSFET in a DFN-8(3.3x3.3) package, manufactured by JSMSEMI. It supports a drain-source breakdown voltage of 28V and a continuous drain current of 12A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerJSMSEMIOriginal Manufacturer
PackageDFN-8(3.3x3.3)Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)28VMax breakdown voltage
Continuous Drain Current (Id)12AMax current handling
Power Dissipation (Pd)19WMax thermal limit
On-Resistance (Rds(on))9.9mΩ@10VResistance when turned fully on
Gate Threshold (Vgs(th))1.2VVoltage required to turn on
Gate Charge (Qg)12nC@10VSwitching energy
Input Capacitance (Ciss)688pFInternal gate capacitance
Output Capacitance (Coss)-Internal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
MCG60N06YHE3-TP N-Channel DFN-8(3.3x3.3) 60V 60A 4.6mΩ@10V
6.4mΩ@4.5V
1.6V