JSM10N15 MOSFET Datasheet & Specifications

N-Channel TO-252 Logic-Level JSMSEMI
Vds Max
150V
Id Max
10A
Rds(on)
450mΩ@4.5V
Vgs(th)
3V

Quick Reference

The JSM10N15 is an N-Channel MOSFET in a TO-252 package, manufactured by JSMSEMI. It supports a drain-source breakdown voltage of 150V and a continuous drain current of 10A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerJSMSEMIOriginal Manufacturer
PackageTO-252Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)150VMax breakdown voltage
Continuous Drain Current (Id)10AMax current handling
Power Dissipation (Pd)54WMax thermal limit
On-Resistance (Rds(on))450mΩ@4.5VResistance when turned fully on
Gate Threshold (Vgs(th))3VVoltage required to turn on
Gate Charge (Qg)-Switching energy
Input Capacitance (Ciss)660pFInternal gate capacitance
Output Capacitance (Coss)74pFInternal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
WSF18N15 N-Channel TO-252 150V 17A 105mΩ@10V 2.5V
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WSF25N20 N-Channel TO-252 200V 25A 60mΩ@10V 2.5V
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H18N20D N-Channel TO-252 200V 18A 95mΩ@10V 2.1V
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H15N65D N-Channel TO-252 650V 15A 220mΩ@10V 3.5V
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H11N70D N-Channel TO-252 700V 11A 330mΩ@10V 3V
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