IRFL210TRPBF MOSFET Datasheet & Specifications

N-Channel SOT-223 Standard Power VISHAY
Vds Max
200V
Id Max
960mA
Rds(on)
1.5ฮฉ@10V
Vgs(th)
4V

Quick Reference

The IRFL210TRPBF is an N-Channel MOSFET in a SOT-223 package, manufactured by VISHAY. It supports a drain-source breakdown voltage of 200V and a continuous drain current of 960mA. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerVISHAYOriginal Manufacturer
PackageSOT-223Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)200VMax breakdown voltage
Continuous Drain Current (Id)960mAMax current handling
Power Dissipation (Pd)2WMax thermal limit
On-Resistance (Rds(on))1.5ฮฉ@10VResistance when turned fully on
Gate Threshold (Vgs(th))4VVoltage required to turn on
Gate Charge (Qg)8.2nC@10VSwitching energy
Input Capacitance (Ciss)140pFInternal gate capacitance
Output Capacitance (Coss)53pFInternal output capacitance
Operating Temp-55โ„ƒ~+150โ„ƒSafe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
STN4NF20L N-Channel SOT-223 200V 1A 1.55ฮฉ@5V 3V
2N60G N-Channel SOT-223 600V 2A 4.2ฮฉ@10V 4V
1N60G N-Channel SOT-223 600V 1A 8.5ฮฉ@10V 4V
1N60G-AA3-R N-Channel SOT-223 600V 1A 12ฮฉ@10V 4V
1N65G N-Channel SOT-223 650V 1A 11ฮฉ@10V 4V