1N65G MOSFET Datasheet & Specifications
N-Channel
SOT-223
High-Voltage
UMW
Vds Max
650V
Id Max
1A
Rds(on)
11Ω@10V
Vgs(th)
4V
Quick Reference
The 1N65G is an N-Channel MOSFET in a SOT-223 package, manufactured by UMW. It supports a drain-source breakdown voltage of 650V and a continuous drain current of 1A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | UMW | Original Manufacturer |
| Package | SOT-223 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 650V | Max breakdown voltage |
| Continuous Drain Current (Id) | 1A | Max current handling |
| Power Dissipation (Pd) | - | Max thermal limit |
| On-Resistance (Rds(on)) | 11Ω@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 4V | Voltage required to turn on |
| Gate Charge (Qg) | 4.8nC@10V | Switching energy |
| Input Capacitance (Ciss) | 150pF | Internal gate capacitance |
| Output Capacitance (Coss) | 25pF | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| No exact equivalents found in database. | |||||||