IRF9389TRPBF MOSFET Array Datasheet & Equivalents

Dual N/P-Channel SO-8 Logic-Level Infineon
Vds Max
30V
Id Max
6.8A
Rds(on)
64mΩ@10V
Vgs(th)
2.3V

Quick Reference

The IRF9389TRPBF is a Dual N/P-Channel in a SO-8 package, manufactured by Infineon. Each channel supports a drain-source breakdown voltage of 30V and a continuous drain current of 6.8A. It is ideal for high-density boards and compact switching circuits.

Technical Specifications

ParameterValueDescription
ManufacturerInfineonOriginal Manufacturer
PackageSO-8Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategoryArrayConfiguration
Drain-Source Voltage (Vds)30VMax breakdown voltage
Continuous Drain Current (Id)6.8AMax current handling
Power Dissipation (Pd)2WMax thermal limit
On-Resistance (Rds(on))64mΩ@10VResistance when turned fully on
Gate Threshold (Vgs(th))2.3VVoltage required to turn on
Gate Charge (Qg)14nC@10VSwitching energy
Input Capacitance (Ciss)398pFInternal gate capacitance
Output Capacitance (Coss)82pFInternal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
DMC3021LSD-13 Dual N/P-Channel SO-8 30V;30V 8.5A;7A 14mΩ@10V
30mΩ@10V
1.45V;1.7V
DIODES 📄 PDF
DMC3025LSD-13 Dual N/P-Channel SO-8 30V 8.5A 32mΩ@4.5V 2V
DIODES 📄 PDF
DMC4040SSDQ-13 Dual N/P-Channel SO-8 40V 7.5A 25mΩ@10V
25mΩ@-10V
1.3V
DIODES 📄 PDF
SI4564DY-T1-GE3 Dual N/P-Channel SO-8 40V 10A 28mΩ@4.5V 2.5V
VISHAY 📄 PDF