DMC3025LSD-13 MOSFET Array Datasheet & Equivalents

Dual N/P-Channel SO-8 Logic-Level DIODES
Vds Max
30V
Id Max
8.5A
Rds(on)
32mΩ@4.5V
Vgs(th)
2V

Quick Reference

The DMC3025LSD-13 is a Dual N/P-Channel in a SO-8 package, manufactured by DIODES. Each channel supports a drain-source breakdown voltage of 30V and a continuous drain current of 8.5A. It is ideal for high-density boards and compact switching circuits.

Technical Specifications

ParameterValueDescription
ManufacturerDIODESOriginal Manufacturer
PackageSO-8Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategoryArrayConfiguration
Drain-Source Voltage (Vds)30VMax breakdown voltage
Continuous Drain Current (Id)8.5AMax current handling
Power Dissipation (Pd)1.2WMax thermal limit
On-Resistance (Rds(on))32mΩ@4.5VResistance when turned fully on
Gate Threshold (Vgs(th))2VVoltage required to turn on
Gate Charge (Qg)9.8nC@10VSwitching energy
Input Capacitance (Ciss)501pFInternal gate capacitance
Output Capacitance (Coss)-Internal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
DMC3021LSD-13 Dual N/P-Channel SO-8 30V;30V 8.5A;7A 14mΩ@10V
30mΩ@10V
1.45V;1.7V
DIODES 📄 PDF
SI4564DY-T1-GE3 Dual N/P-Channel SO-8 40V 10A 28mΩ@4.5V 2.5V
VISHAY 📄 PDF