IRF820PBF MOSFET Datasheet & Specifications
N-Channel
TO-220AB
High-Voltage
VISHAY
Vds Max
500V
Id Max
1.6A
Rds(on)
3ฮฉ@10V
Vgs(th)
4V
Quick Reference
The IRF820PBF is an N-Channel MOSFET in a TO-220AB package, manufactured by VISHAY. It supports a drain-source breakdown voltage of 500V and a continuous drain current of 1.6A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | VISHAY | Original Manufacturer |
| Package | TO-220AB | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 500V | Max breakdown voltage |
| Continuous Drain Current (Id) | 1.6A | Max current handling |
| Power Dissipation (Pd) | 50W | Max thermal limit |
| On-Resistance (Rds(on)) | 3ฮฉ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 4V | Voltage required to turn on |
| Gate Charge (Qg) | 24nC@10V | Switching energy |
| Input Capacitance (Ciss) | 360pF | Internal gate capacitance |
| Output Capacitance (Coss) | 92pF | Internal output capacitance |
| Operating Temp | -55โ~+150โ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| IRFB13N50APBF | N-Channel | TO-220AB | 500V | 14A | 450mฮฉ@10V | 4V | VISHAY ๐ PDF |
| SIHP12N50C-E3 | N-Channel | TO-220AB | 500V | 7.5A | 555mฮฉ@10V | 3V | VISHAY ๐ PDF |
| IRF840PBF | N-Channel | TO-220AB | 500V | 8A | 850mฮฉ@10V | 4V | VISHAY ๐ PDF |
| IRF830PbF | N-Channel | TO-220AB | 500V | 4.5A | 1.5ฮฉ@10V | 4V | VISHAY ๐ PDF |
| IRFBC30APBF | N-Channel | TO-220AB | 600V | 3.6A | 2.2ฮฉ@10V | 4.5V | VISHAY ๐ PDF |
| IRFBE30PBF | N-Channel | TO-220AB | 800V | 4.1A | 3ฮฉ@10V | 2V | VISHAY ๐ PDF |
| IRFBF20PBF | N-Channel | TO-220AB | 900V | 1.7A | 8ฮฉ@10V | 4V | VISHAY ๐ PDF |