IRF7416TRPBF MOSFET Datasheet & Specifications

P-Channel SO-8 Logic-Level Infineon
Vds Max
30V
Id Max
10A
Rds(on)
35mΩ@4.5V
Vgs(th)
2.04V

Quick Reference

The IRF7416TRPBF is an P-Channel MOSFET in a SO-8 package, manufactured by Infineon. It supports a drain-source breakdown voltage of 30V and a continuous drain current of 10A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerInfineonOriginal Manufacturer
PackageSO-8Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)30VMax breakdown voltage
Continuous Drain Current (Id)10AMax current handling
Power Dissipation (Pd)2.5WMax thermal limit
On-Resistance (Rds(on))35mΩ@4.5VResistance when turned fully on
Gate Threshold (Vgs(th))2.04VVoltage required to turn on
Gate Charge (Qg)92nC@10VSwitching energy
Input Capacitance (Ciss)1.7nFInternal gate capacitance
Output Capacitance (Coss)-Internal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
SI4497DY-T1-GE3 P-Channel SO-8 30V 36A 4.6mΩ@4.5V 2.5V
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SI7149ADP-T1-GE3 P-Channel SO-8 30V 23.1A 5.2mΩ@10V 1.2V
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FDS6681Z P-Channel SO-8 30V 20A 6.5mΩ@4.5V 1.8V
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SI4459ADY-T1-GE3 P-Channel SO-8 30V 29A 7.75mΩ@4.5V 2.5V
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TPC8107&9-VB P-Channel SO-8 30V 10.9A 11mΩ@10V
15mΩ@4.5V
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SI4405DY-T1-GE3-VB P-Channel SO-8 30V 13.5A 11mΩ@10V
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AO4447A-VB P-Channel SO-8 30V 13.5A 11mΩ@10V
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SI4825DDY-T1-GE3 P-Channel SO-8 30V 14.9A 20.5mΩ@4.5V 2.5V
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FDS6675BZ P-Channel SO-8 30V 11A 21.8mΩ@4.5V 2V
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