IRF3205PBF MOSFET Datasheet & Specifications

N-Channel TO-220AB High-Current Infineon
Vds Max
55V
Id Max
110A
Rds(on)
8mΩ@10V
Vgs(th)
4V

Quick Reference

The IRF3205PBF is an N-Channel MOSFET in a TO-220AB package, manufactured by Infineon. It supports a drain-source breakdown voltage of 55V and a continuous drain current of 110A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerInfineonOriginal Manufacturer
PackageTO-220ABPhysical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)55VMax breakdown voltage
Continuous Drain Current (Id)110AMax current handling
Power Dissipation (Pd)200WMax thermal limit
On-Resistance (Rds(on))8mΩ@10VResistance when turned fully on
Gate Threshold (Vgs(th))4VVoltage required to turn on
Gate Charge (Qg)146nC@10VSwitching energy
Input Capacitance (Ciss)3.247nFInternal gate capacitance
Output Capacitance (Coss)-Internal output capacitance
Operating Temp-55℃~+175℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
IRFB3206PBF N-Channel TO-220AB 60V 210A 3mΩ@10V 4V
Infineon 📄 PDF
IRFB3077PBF N-Channel TO-220AB 75V 210A 3.3mΩ@10V 4V
Infineon 📄 PDF
FDP86363-F085 N-Channel TO-220AB 80V 110A 2.8mΩ@10V 4V
onsemi 📄 PDF