IRFB3206PBF MOSFET Datasheet & Specifications

N-Channel TO-220AB High-Current Infineon
Vds Max
60V
Id Max
210A
Rds(on)
3mΩ@10V
Vgs(th)
4V

Quick Reference

The IRFB3206PBF is an N-Channel MOSFET in a TO-220AB package, manufactured by Infineon. It supports a drain-source breakdown voltage of 60V and a continuous drain current of 210A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerInfineonOriginal Manufacturer
PackageTO-220ABPhysical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)60VMax breakdown voltage
Continuous Drain Current (Id)210AMax current handling
Power Dissipation (Pd)300WMax thermal limit
On-Resistance (Rds(on))3mΩ@10VResistance when turned fully on
Gate Threshold (Vgs(th))4VVoltage required to turn on
Gate Charge (Qg)170nC@10VSwitching energy
Input Capacitance (Ciss)6.54nFInternal gate capacitance
Output Capacitance (Coss)720pFInternal output capacitance
Operating Temp-55℃~+175℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
IRFB3077PBF N-Channel TO-220AB 75V 210A 3.3mΩ@10V 4V
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