IPT015N10N5-HXY MOSFET Datasheet & Specifications
N-Channel
TOLL
High-Current
HXY MOSFET
Vds Max
100V
Id Max
312A
Rds(on)
2mΩ@10V
Vgs(th)
4V
Quick Reference
The IPT015N10N5-HXY is an N-Channel MOSFET in a TOLL package, manufactured by HXY MOSFET. It supports a drain-source breakdown voltage of 100V and a continuous drain current of 312A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | HXY MOSFET | Original Manufacturer |
| Package | TOLL | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 100V | Max breakdown voltage |
| Continuous Drain Current (Id) | 312A | Max current handling |
| Power Dissipation (Pd) | 390.6W | Max thermal limit |
| On-Resistance (Rds(on)) | 2mΩ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 4V | Voltage required to turn on |
| Gate Charge (Qg) | 250nC@10V | Switching energy |
| Input Capacitance (Ciss) | 14.3nF | Internal gate capacitance |
| Output Capacitance (Coss) | 2.12nF | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| SP010N01AGHTO | N-Channel | TOLL | 100V | 430A | 1.2mΩ@10V | 4V | Siliup 📄 PDF |
| IPT017N10NM5LF2ATMA1 | N-Channel | TOLL | 100V | 321A | 1.3mΩ@15V | 3.1V | Infineon 📄 PDF |
| SP010N02AGHTO | N-Channel | TOLL | 100V | 340A | 1.65mΩ@10V | 4V | Siliup 📄 PDF |
| NCEP020N10LL | N-Channel | TOLL | 100V | 330A | 2mΩ@10V | 4V | NCE 📄 PDF |
| NCEP020N10LL | N-Channel | TOLL | 100V | 500A | 2.5mΩ@6V | 4V | Tokmas 📄 PDF |
| MGV022N14N | N-Channel | TOLL | 135V | 315A | 2.2mΩ@10V | 4V | Megain 📄 PDF |