SP010N02AGHTO MOSFET Datasheet & Specifications

N-Channel TOLL High-Current Siliup
Vds Max
100V
Id Max
340A
Rds(on)
1.65mΩ@10V
Vgs(th)
4V

Quick Reference

The SP010N02AGHTO is an N-Channel MOSFET in a TOLL package, manufactured by Siliup. It supports a drain-source breakdown voltage of 100V and a continuous drain current of 340A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerSiliupOriginal Manufacturer
PackageTOLLPhysical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)100VMax breakdown voltage
Continuous Drain Current (Id)340AMax current handling
Power Dissipation (Pd)400WMax thermal limit
On-Resistance (Rds(on))1.65mΩ@10VResistance when turned fully on
Gate Threshold (Vgs(th))4VVoltage required to turn on
Gate Charge (Qg)198nC@10VSwitching energy
Input Capacitance (Ciss)-Internal gate capacitance
Output Capacitance (Coss)1.889nFInternal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
SP010N01AGHTO N-Channel TOLL 100V 430A 1.2mΩ@10V 4V
Siliup 📄 PDF
NCEP020N10LL N-Channel TOLL 100V 500A 2.5mΩ@6V 4V
Tokmas 📄 PDF