IPB054N06N3 G MOSFET Datasheet & Specifications
N-Channel
TO-263-3
High-Current
Infineon
Vds Max
60V
Id Max
80A
Rds(on)
5.7mΩ@10V
Vgs(th)
4V
Quick Reference
The IPB054N06N3 G is an N-Channel MOSFET in a TO-263-3 package, manufactured by Infineon. It supports a drain-source breakdown voltage of 60V and a continuous drain current of 80A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | Infineon | Original Manufacturer |
| Package | TO-263-3 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 60V | Max breakdown voltage |
| Continuous Drain Current (Id) | 80A | Max current handling |
| Power Dissipation (Pd) | 115W | Max thermal limit |
| On-Resistance (Rds(on)) | 5.7mΩ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 4V | Voltage required to turn on |
| Gate Charge (Qg) | 61nC@10V | Switching energy |
| Input Capacitance (Ciss) | 5nF | Internal gate capacitance |
| Output Capacitance (Coss) | 1.1nF | Internal output capacitance |
| Operating Temp | -55℃~+175℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| IPB018N06NF2S | N-Channel | TO-263-3 | 60V | 191A | 1.49mΩ@10V | 2.8V | Infineon 📄 PDF |
| IPB120N06S4-03 | N-Channel | TO-263-3 | 60V | 120A | 2.8mΩ@10V | 4V | Infineon 📄 PDF |
| CSD19536KTT | N-Channel | TO-263-3 | 100V | 200A | 2.2mΩ@6V | 3.2V | TI 📄 PDF |
| CSD19535KTT | N-Channel | TO-263-3 | 100V | 200A | 3.4mΩ@10V | 3.4V | TI 📄 PDF |
| IPB108N15N3G | N-Channel | TO-263-3 | 150V | 83A | 10.8mΩ@10V | 4V | Infineon |