CSD19536KTT MOSFET Datasheet & Specifications
N-Channel
TO-263-3
High-Current
TI
Vds Max
100V
Id Max
200A
Rds(on)
2.2mΩ@6V
Vgs(th)
3.2V
Quick Reference
The CSD19536KTT is an N-Channel MOSFET in a TO-263-3 package, manufactured by TI. It supports a drain-source breakdown voltage of 100V and a continuous drain current of 200A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | TI | Original Manufacturer |
| Package | TO-263-3 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 100V | Max breakdown voltage |
| Continuous Drain Current (Id) | 200A | Max current handling |
| Power Dissipation (Pd) | 375W | Max thermal limit |
| On-Resistance (Rds(on)) | 2.2mΩ@6V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 3.2V | Voltage required to turn on |
| Gate Charge (Qg) | 153nC@10V | Switching energy |
| Input Capacitance (Ciss) | 12nF | Internal gate capacitance |
| Output Capacitance (Coss) | 2.37nF | Internal output capacitance |
| Operating Temp | -55℃~+175℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| CSD19535KTT | N-Channel | TO-263-3 | 100V | 200A | 3.4mΩ@10V | 3.4V | TI 📄 PDF |