IPB023N04NF2S MOSFET Datasheet & Specifications
N-Channel
TO-263-3
Logic-Level
Infineon
Vds Max
40V
Id Max
122A
Rds(on)
1.9mΩ@10V
Vgs(th)
2.8V
Quick Reference
The IPB023N04NF2S is an N-Channel MOSFET in a TO-263-3 package, manufactured by Infineon. It supports a drain-source breakdown voltage of 40V and a continuous drain current of 122A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | Infineon | Original Manufacturer |
| Package | TO-263-3 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 40V | Max breakdown voltage |
| Continuous Drain Current (Id) | 122A | Max current handling |
| Power Dissipation (Pd) | 158W | Max thermal limit |
| On-Resistance (Rds(on)) | 1.9mΩ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 2.8V | Voltage required to turn on |
| Gate Charge (Qg) | 68nC@10V | Switching energy |
| Input Capacitance (Ciss) | 4.8nF | Internal gate capacitance |
| Output Capacitance (Coss) | 1.78nF | Internal output capacitance |
| Operating Temp | -55℃~+175℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| IPB018N06NF2S | N-Channel | TO-263-3 | 60V | 191A | 1.49mΩ@10V | 2.8V | Infineon 📄 PDF |
| CSD19536KTT | N-Channel | TO-263-3 | 100V | 200A | 2.2mΩ@6V | 3.2V | TI 📄 PDF |