HP804C360D MOSFET Datasheet & Specifications

P-Channel SOP-8 Logic-Level R+O
Vds Max
40V
Id Max
8A
Rds(on)
21mΩ@10V
Vgs(th)
1.6V

Quick Reference

The HP804C360D is an P-Channel MOSFET in a SOP-8 package, manufactured by R+O. It supports a drain-source breakdown voltage of 40V and a continuous drain current of 8A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerR+OOriginal Manufacturer
PackageSOP-8Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)40VMax breakdown voltage
Continuous Drain Current (Id)8AMax current handling
Power Dissipation (Pd)1.4WMax thermal limit
On-Resistance (Rds(on))21mΩ@10VResistance when turned fully on
Gate Threshold (Vgs(th))1.6VVoltage required to turn on
Gate Charge (Qg)20.9nC@10VSwitching energy
Input Capacitance (Ciss)908pFInternal gate capacitance
Output Capacitance (Coss)100pF;121pFInternal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
PJM13P40PA P-Channel SOP-8 40V 13A 9mΩ@10V
13mΩ@4.5V
1.6V
PJSEMI 📄 PDF
CJQ13P04 P-Channel SOP-8 40V 13A 11mΩ@10V 1.5V
AO4614 P-Channel SOP-8 40V 8A;7A 14mΩ@10V
29mΩ@10V
1.5V
TECH PUBLIC 📄 PDF
NCE4614 P-Channel SOP-8 40V 8A 35mΩ@10V 2V
AO4443 P-Channel SOP-8 40V 8A 35mΩ@10V 2V
TM4614B P-Channel SOP-8 44V;40V 8A 24mΩ@10V
35mΩ@10V
1.5V
Tritech-MOS 📄 PDF
AO4441 P-Channel SOP-8 60V 8.5A 23mΩ@10V 1.6V
JSMSEMI 📄 PDF
HP806P550S P-Channel SOP-8 60V 8A 27mΩ@10V
34mΩ@4.5V
1.7V