HMMDT54017F Transistor Datasheet & Specifications

PNP BJT | HXY MOSFET

PNPSOT-363General Purpose
VCEO
-
Ic Max
150V
Pd Max
-
Gain
-
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Quick Reference

The HMMDT54017F is a PNP bipolar transistor in a SOT-363 package. This datasheet provides complete specifications including - breakdown voltage and 150V continuous collector current. Download the HMMDT54017F datasheet PDF below for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerHXY MOSFETOriginal Manufacturer
PackageSOT-363Physical mounting
VCEO-Breakdown voltage
IC Max150VCollector current
Pd Max-Power dissipation
Gain-DC current gain
Frequency200mWTransition speed
VCEsat50Saturation voltage
Vebo100MHzEmitter-Base voltage
Temp200mAOperating temp

Direct Replacements & Alternatives

PartTypePackageVCEOIcPd
MMDT2907APNPSOT-363-60V600mA
HMMDT39067FPNPSOT-363-40V-
MMDT3906DWPNPSOT-363-40V200mA
BC856SPNPSOT-363-65V-
UMT1NPNPSOT-363-50V150mA
BC857BDWPNPSOT-363-45V200mA
MMDT3906PNPSOT-36340V200mA200mW
UMT1NPNPSOT-363-50V150mA
MMDT5401PNPSOT-363-150V600mA
View all SOT-363 PNP Transistors ›