HMMDT39467F Transistor Datasheet & Specifications

NPN+PNP BJT | HXY MOSFET

NPN+PNPSOT-363General Purpose
VCEO
40V
Ic Max
200mA
Pd Max
200mW
Gain
100
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Quick Reference

The HMMDT39467F is a NPN+PNP bipolar transistor in a SOT-363 package. This datasheet provides complete specifications including 40V breakdown voltage and 200mA continuous collector current. Download the HMMDT39467F datasheet PDF below for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerHXY MOSFETOriginal Manufacturer
PackageSOT-363Physical mounting
VCEO40VBreakdown voltage
IC Max200mACollector current
Pd Max200mWPower dissipation
Gain100DC current gain
Frequency-Transition speed
VCEsat-Saturation voltage
Vebo300MHzEmitter-Base voltage
Temp-55℃~+150℃Operating temp

Direct Replacements & Alternatives

PartTypePackageVCEOIcPd
MMDT3946NPN+PNPSOT-36340V200mA200mW
PMBT3946YPN-HXYNPN+PNPSOT-36340V200mA200mW
MBT3946DW1T1G-HXYNPN+PNPSOT-36340V200mA200mW
MMDT3946NPN+PNPSOT-36340V200mA200mW
MMDT3946NPN+PNPSOT-36340V200mA200mW
HUMZ1NTRNPN+PNPSOT-36350V150mA150mW
MMDT4413NPN+PNPSOT-363-40V600mA
BC847PNNPN+PNPSOT-36345V100mA200mW
UMF28NTRNPN+PNPSOT-36350V150mA150mW
MMDT3946DWNPN+PNPSOT-36340V200mA200mW
View all SOT-363 NPN+PNP Transistors ›