HL8205TS MOSFET Datasheet & Specifications

N-Channel TSSOP-8 Logic-Level R+O
Vds Max
20V
Id Max
6A
Rds(on)
27mΩ@4.5V
Vgs(th)
700mV

Quick Reference

The HL8205TS is an N-Channel MOSFET in a TSSOP-8 package, manufactured by R+O. It supports a drain-source breakdown voltage of 20V and a continuous drain current of 6A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerR+OOriginal Manufacturer
PackageTSSOP-8Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)20VMax breakdown voltage
Continuous Drain Current (Id)6AMax current handling
Power Dissipation (Pd)1.5WMax thermal limit
On-Resistance (Rds(on))27mΩ@4.5VResistance when turned fully on
Gate Threshold (Vgs(th))700mVVoltage required to turn on
Gate Charge (Qg)10nC@4.5VSwitching energy
Input Capacitance (Ciss)600pF@8VInternal gate capacitance
Output Capacitance (Coss)-Internal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
XR8814A N-Channel TSSOP-8 20V 8A 10mΩ@4.5V 700mV
XNRUSEMI 📄 PDF
AP2012 N-Channel TSSOP-8 20V 12A 14mΩ@2.5V 500mV
ALLPOWER 📄 PDF
FH8200 N-Channel TSSOP-8 20V 12A 15mΩ@2.5V 1V
XIN FEI HONG 📄 PDF
AO8810-JSM N-Channel TSSOP-8 20V 7A 28mΩ@1.8V 1V
JSMSEMI 📄 PDF