AP2012 MOSFET Datasheet & Specifications
N-Channel
TSSOP-8
Logic-Level
ALLPOWER
Vds Max
20V
Id Max
12A
Rds(on)
14mΩ@2.5V
Vgs(th)
500mV
Quick Reference
The AP2012 is an N-Channel MOSFET in a TSSOP-8 package, manufactured by ALLPOWER. It supports a drain-source breakdown voltage of 20V and a continuous drain current of 12A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | ALLPOWER | Original Manufacturer |
| Package | TSSOP-8 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 20V | Max breakdown voltage |
| Continuous Drain Current (Id) | 12A | Max current handling |
| Power Dissipation (Pd) | 2W | Max thermal limit |
| On-Resistance (Rds(on)) | 14mΩ@2.5V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 500mV | Voltage required to turn on |
| Gate Charge (Qg) | 17.9nC@4.5V | Switching energy |
| Input Capacitance (Ciss) | 1.8nF | Internal gate capacitance |
| Output Capacitance (Coss) | - | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |