HL2319 MOSFET Datasheet & Specifications

P-Channel SOT-23 Logic-Level R+O
Vds Max
40V
Id Max
3A
Rds(on)
85mΩ@10V
Vgs(th)
1.6V

Quick Reference

The HL2319 is an P-Channel MOSFET in a SOT-23 package, manufactured by R+O. It supports a drain-source breakdown voltage of 40V and a continuous drain current of 3A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerR+OOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)40VMax breakdown voltage
Continuous Drain Current (Id)3AMax current handling
Power Dissipation (Pd)350mWMax thermal limit
On-Resistance (Rds(on))85mΩ@10VResistance when turned fully on
Gate Threshold (Vgs(th))1.6VVoltage required to turn on
Gate Charge (Qg)6.4nC@10VSwitching energy
Input Capacitance (Ciss)620pFInternal gate capacitance
Output Capacitance (Coss)-Internal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
TM05P04I P-Channel SOT-23 40V 5A 47mΩ@10V 1.7V
Tritech-MOS 📄 PDF
HT304P880S P-Channel SOT-23 40V 3A 63mΩ@10V
75mΩ@4.5V
1.6V
SI2319-TP P-Channel SOT-23 40V 3.5A 72mΩ@10V 1.8V
BRCS5P06MA P-Channel SOT-23 60V 5A 103mΩ@4.5V 1.5V
BLUE ROCKET 📄 PDF