SI2319-TP MOSFET Datasheet & Specifications

P-Channel SOT-23 Logic-Level MCC
Vds Max
40V
Id Max
3.5A
Rds(on)
72mΩ@10V
Vgs(th)
1.8V

Quick Reference

The SI2319-TP is an P-Channel MOSFET in a SOT-23 package, manufactured by MCC. It supports a drain-source breakdown voltage of 40V and a continuous drain current of 3.5A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerMCCOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)40VMax breakdown voltage
Continuous Drain Current (Id)3.5AMax current handling
Power Dissipation (Pd)1.4WMax thermal limit
On-Resistance (Rds(on))72mΩ@10VResistance when turned fully on
Gate Threshold (Vgs(th))1.8VVoltage required to turn on
Gate Charge (Qg)13nC@10VSwitching energy
Input Capacitance (Ciss)536pFInternal gate capacitance
Output Capacitance (Coss)43pFInternal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
TM05P04I P-Channel SOT-23 40V 5A 47mΩ@10V 1.7V
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BRCS5P06MA P-Channel SOT-23 60V 5A 103mΩ@4.5V 1.5V
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