HD506N330S MOSFET Datasheet & Specifications

N-Channel PDFN-8L(5x6) Logic-Level R+O
Vds Max
60V
Id Max
20A
Rds(on)
22mΩ@10V
Vgs(th)
1.7V

Quick Reference

The HD506N330S is an N-Channel MOSFET in a PDFN-8L(5x6) package, manufactured by R+O. It supports a drain-source breakdown voltage of 60V and a continuous drain current of 20A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerR+OOriginal Manufacturer
PackagePDFN-8L(5x6)Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)60VMax breakdown voltage
Continuous Drain Current (Id)20AMax current handling
Power Dissipation (Pd)26WMax thermal limit
On-Resistance (Rds(on))22mΩ@10VResistance when turned fully on
Gate Threshold (Vgs(th))1.7VVoltage required to turn on
Gate Charge (Qg)20.9nCSwitching energy
Input Capacitance (Ciss)900pFInternal gate capacitance
Output Capacitance (Coss)62pFInternal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

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