HD504P190S MOSFET Datasheet & Specifications
P-Channel
PDFN-8L(5x6)
Logic-Level
R+O
Vds Max
40V
Id Max
35A
Rds(on)
9mΩ@10V;13mΩ@4.5V
Vgs(th)
1.6V
Quick Reference
The HD504P190S is an P-Channel MOSFET in a PDFN-8L(5x6) package, manufactured by R+O. It supports a drain-source breakdown voltage of 40V and a continuous drain current of 35A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | R+O | Original Manufacturer |
| Package | PDFN-8L(5x6) | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 40V | Max breakdown voltage |
| Continuous Drain Current (Id) | 35A | Max current handling |
| Power Dissipation (Pd) | 41W | Max thermal limit |
| On-Resistance (Rds(on)) | 9mΩ@10V;13mΩ@4.5V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 1.6V | Voltage required to turn on |
| Gate Charge (Qg) | 50.8nC@10V | Switching energy |
| Input Capacitance (Ciss) | 2.603nF | Internal gate capacitance |
| Output Capacitance (Coss) | 254pF | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| XR120P04F | P-Channel | PDFN-8L(5x6) | 40V | 120A | 3.1mΩ@10V | 1.7V | XNRUSEMI 📄 PDF |
| SP40P04NK | P-Channel | PDFN-8L(5x6) | 40V | 85A | 4.9mΩ@10V 6.6mΩ@4.5V |
1.7V | Siliup 📄 PDF |
| XR80P06F | P-Channel | PDFN-8L(5x6) | 60V | 80A | 10mΩ@10V | 1.6V | XNRUSEMI 📄 PDF |
| XR60P06F | P-Channel | PDFN-8L(5x6) | 60V | 60A | 10.5mΩ@10V | 1.6V | XNRUSEMI 📄 PDF |
| XR50P06F | P-Channel | PDFN-8L(5x6) | 60V | 50A | 16.8mΩ@10V | 1.6V | XNRUSEMI 📄 PDF |