H3N80D MOSFET Datasheet & Specifications
N-Channel
TO-252
High-Voltage
Huixin
Vds Max
800V
Id Max
3A
Rds(on)
3.8Ī©@10V
Vgs(th)
4V
Quick Reference
The H3N80D is an N-Channel MOSFET in a TO-252 package, manufactured by Huixin. It supports a drain-source breakdown voltage of 800V and a continuous drain current of 3A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | Huixin | Original Manufacturer |
| Package | TO-252 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 800V | Max breakdown voltage |
| Continuous Drain Current (Id) | 3A | Max current handling |
| Power Dissipation (Pd) | 75W | Max thermal limit |
| On-Resistance (Rds(on)) | 3.8Ī©@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 4V | Voltage required to turn on |
| Gate Charge (Qg) | 16nC@400V | Switching energy |
| Input Capacitance (Ciss) | - | Internal gate capacitance |
| Output Capacitance (Coss) | - | Internal output capacitance |
| Operating Temp | -55ā~+150ā | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| ASD80R750E | N-Channel | TO-252 | 800V | 8.5A | 750mĪ©@10V | 4.2V | ANHI š PDF |