FZT688B Datasheet & Equivalents
NPN
SOT-223
High Power
DIODES
VCEO
12V
Ic Max
4A
Pd Max
3W
hFE Gain
500
Quick Reference
The FZT688B is a NPN bipolar junction transistor in a SOT-223 package, manufactured by DIODES. It supports a breakdown voltage of 12V and continuous collector current of 4A. It is widely used in switching and amplification circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | DIODES | Original Manufacturer |
| Package | SOT-223 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| Category | Single | Configuration |
| Collector-Emitter Voltage (VCEO) | 12V | Max breakdown voltage |
| Collector Current (Ic) | 4A | Max current handling |
| Power Dissipation (Pd) | 3W | Max thermal limit |
| DC Current Gain (hFE) | 500 | Base signal amplification ratio |
| Transition Frequency (fT) | 150MHz | Max operating frequency |
| Saturation Voltage (VCEsat) | - | Voltage drop when fully ON |
| Emitter-Base Voltage (Vebo) | - | Max emitter-base breakdown |
| Collector Cutoff Current | - | Leakage current when OFF |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | IC | hFE | Pd | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| FZT688BTA | NPN | SOT-223 | 12V | 4A | 400 | 1.6W | DIODES 📄 PDF |
| ZXTN25020DGTA | NPN | SOT-223 | 20V | 7A | 250 | 12.8W | DIODES 📄 PDF |
| ZXTN19020DGTA | NPN | SOT-223 | 20V | 9A | 130 | 12.8W | DIODES 📄 PDF |
| FZT1049ATA | NPN | SOT-223 | 25V | 5A | 300 | 3W | DIODES 📄 PDF |
| ZXTN2005GTA | NPN | SOT-223 | 25V | 7A | 300 | 3W | DIODES 📄 PDF |
| FZT849TA | NPN | SOT-223 | 30V | 7A | 100 | 3W | DIODES 📄 PDF |