ZXTN25020DGTA Datasheet & Equivalents
NPN
SOT-223
High Power
DIODES
VCEO
20V
Ic Max
7A
Pd Max
12.8W
hFE Gain
250
Quick Reference
The ZXTN25020DGTA is a NPN bipolar junction transistor in a SOT-223 package, manufactured by DIODES. It supports a breakdown voltage of 20V and continuous collector current of 7A. It is widely used in switching and amplification circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | DIODES | Original Manufacturer |
| Package | SOT-223 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| Category | Single | Configuration |
| Collector-Emitter Voltage (VCEO) | 20V | Max breakdown voltage |
| Collector Current (Ic) | 7A | Max current handling |
| Power Dissipation (Pd) | 12.8W | Max thermal limit |
| DC Current Gain (hFE) | 250 | Base signal amplification ratio |
| Transition Frequency (fT) | 215MHz | Max operating frequency |
| Saturation Voltage (VCEsat) | 48mV | Voltage drop when fully ON |
| Emitter-Base Voltage (Vebo) | 7V | Max emitter-base breakdown |
| Collector Cutoff Current | 50nA | Leakage current when OFF |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | IC | hFE | Pd | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| ZXTN19020DGTA | NPN | SOT-223 | 20V | 9A | 130 | 12.8W | DIODES 📄 PDF |
| ZXTN2005GTA | NPN | SOT-223 | 25V | 7A | 300 | 3W | DIODES 📄 PDF |
| FZT849TA | NPN | SOT-223 | 30V | 7A | 100 | 3W | DIODES 📄 PDF |